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Oshima, Takeshi; Lohrmann, A.*; Johnson, B. C.*; Castelletto, S.*; Onoda, Shinobu; Makino, Takahiro; Takeyama, Akinori; Klein, J. R.*; Bosi, M.*; Negri, M.*; et al.
no journal, ,
no abstracts in English
-ray irradiation under high temperature and humidity circumstance on the electrical characteristics of SiC MOSFETsTakeyama, Akinori; Matsuda, Takuma; Yokoseki, Takashi; Mitomo, Satoshi; Murata, Koichi; Makino, Takahiro; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; Kandori, Mikio*; et al.
no journal, ,
no abstracts in English
Nozaki, Mikito*; Yoshigoe, Akitaka; Ito, Joyo*; Asahara, Ryohei*; Nakazawa, Satoshi*; Ishida, Masahiro*; Ueda, Tetsuzo*; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*
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Structural changes at Ti/GaN or Al/Ti/GaN interfaces were studied by using synchrotron radiation photoelectron spectroscopy. It was found that the Al capping layer plays an important role for oxygen diffusion barriers. The Al layer also stimulates interfacial reactions via introducing oxygen into Ti layers. We found that this reaction dramatically changes Ti/GaN interface structures.
Yamada, Takahiro*; Yoshigoe, Akitaka; Ito, Joyo*; Asahara, Ryohei*; Nozaki, Mikito*; Nakazawa, Satoshi*; Ishida, Masahiro*; Ueda, Tetsuzo*; Hosoi, Takuji*; Shimura, Takayoshi*; et al.
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To achieve high performance of GaN MOS devices, high quality interfaces between insulator and GaN are essentially needed. The precise control of native surface oxide and/or interfacial oxide layer is important. In this study, oxide formation process in thermally oxidized GaN surface is analyzed by using synchrotron radiation photoelectron spectroscopy.